SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD, AND ELECTRONIC APPARATUS

摘要

The present disclosure relates to a semiconductor device and a manufacturing method, and an electronic apparatus that enable manufacturing of a stacked structure with high precision. A solid-state image sensor includes a semiconductor substrate where a photodiode is formed, and an epitaxial layer where a transfer transistor to be stacked on the photodiode of the semiconductor substrate is formed, the epitaxial layer being formed by growing a crystalline layer with aligned crystal axes on the semiconductor substrate. A reentrant portion formed at an end portion of a registration measurement mark used for registration measurement to perform relative adjustment before and after a step of forming the epitaxial layer is formed to be distanced from a detection region for detecting the registration measurement mark by a predetermined distance. The present technology can be applied to, for example, various semiconductor devices having a stacked structure.

主权项

1. A semiconductor device including:
a semiconductor layer where a predetermined first element is formed; and a growth layer where a second element to be stacked on the first element of the semiconductor layer is formed, the growth layer being formed by growing a crystalline layer with aligned crystal axes on the semiconductor layer, wherein a reentrant portion formed at an end portion of a measurement mark used for measurement to perform relative adjustment before and after a step of forming the growth layer is formed to be distanced from a detection region for detecting the measurement mark by a predetermined distance.