| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting element having high yield.SOLUTION: A semiconductor light emitting element includes: a substrate; a first semiconductor layer, an active layer and a second semiconductor layer which are formed in layers above the substrate; and a first electrode. The active layer is composed of a nitride semiconductor and has a surface in a first region, which is located on the first semiconductor layer side is composed to include a concave-convex surface, and the surface in a second region different from the first region, which is located on the first semiconductor layer side is composed of a flat surface. The first electrode contacts the first semiconductor layer in the second region and is formed in a state of having an insulating property to the active layer and the second semiconductor layer. The active layer and the second semiconductor layer are not formed in layers located above the first semiconductor layer and in a region contacting the first electrode out of the second region.SELECTED DRAWING: Figure 1 |
