SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE WITH MODE REGISTER

摘要

PURPOSE: A synchronous semiconductor memory device is provided to give default mode register value without additional processing using a mode register. CONSTITUTION: The mode register in synchronous memory device is comprises a first power terminal, a second power terminal, a first node, a p-MOS transistor and a n-MOS transistor, a first program transistor and a second program transistor. A power supply voltage applied to the first power terminal and a ground voltage applied to the second power terminal. Power supply voltage and ground voltage delivered to the first node. The p-MOS transistor forms current path by a first high voltage detection signal. The n-MOS transistor forms current path to ground by the high voltage detection signal and voltage detection signal with inverse phase. The first program transistor forms a channel between the p-MOS transistor and the first node. The second program transistor forms a channel between the first node and n-MOS transistor.