METHOD FOR MANUFACTURING A CAPACITOR OF A SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE: A method for manufacturing a capacitor is provided, which prevents a progress badness occurrence happened when manufacturing a capacitor of MDL which an analog circuit is inserted. CONSTITUTION: The method for manufacturing a capacitor comprises the steps of: forming a first conductive film at a certain portion on an insulating film (200) which has a voluntary wire line; etching the first conductive film and forming a first wire line (102b) connected to the voluntary wire line and a lower electrode (202a); forming an insulating film between layers (204) on the insulating substrate (200) having the lower electrode (202a); etching the insulating film between layers (204) and forming a first bear hole (h1) in the insulating film (204); forming a dielectric film (206) in the bear hole (h1) and on the insulating film (204); forming a protecting film (208a) on the dielectric film (206); and forming a second wire line (202b) and an upper electrode (212a). Since the dielectric film can to be protected, the loss of the dielectric and a short occurrence between the upper electrode and lower electrode can to be prevented.