| 摘要 |
PURPOSE: An apparatus for plating a metal electrode of a p-n junction semiconductor and a plating method using the same are provided to simplify a plating process by controlling easily a plating speed according to the intensity and the wavelength of the light. CONSTITUTION: A vessel is filled with an electrolytic plating solution(15). A light source(14) provides light energy to a p-n junction semiconductor and the electrolytic plating solution(15). A metal source(16) is electrically connected with a rear electrode(13) of the p-n junction semiconductor. The electrolytic plating solution(15) is formed with AgCN, CuSO4, CuCN, KOH, NiCl2·6H2O, NiSO4(NH4)2·SO4·6H2O, AgCl or AgNO3. A metal electrode of the p-n junction semiconductor is located at the inside of the vessel. At this time, an n-type silicon layer(12) connected with the metal source(16) is directed to the light. The light is uniformly irradiated to the n-type silicon layer(12). The metal source(16) is formed with Cu, Ni, and Ag according to the plating material. The light is irradiated to the n-type silicon layer(12) and the electrolytic plating solution(15).
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