发明名称 |
Plasma etching method |
摘要 |
It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
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申请公布号 |
US8580131(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213363488 |
申请日期 |
2012.02.01 |
申请人 |
WATANABE TOMOYUKI;YAKUSHIJI MAMORU;MORIMOTO MICHIKAZU;ONO TETSUO;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
WATANABE TOMOYUKI;YAKUSHIJI MAMORU;MORIMOTO MICHIKAZU;ONO TETSUO |
分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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