发明名称 WIRING STRUCTURE, METHOD FOR FORMING THE SAME, AND DUAL DAMASCENE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a wiring structure with harmonized stress, and a method for fabricating it. SOLUTION: The wiring structure is composed of a substrate 100 having a conductive material 102. A composite dielectric layer 110 with at least one stress-harmonizing layer 106 interposed therein overlies a substrate 100. A conductive feature S in the composite dielectric layer 110 passes through the at least one stress-harmonizing layer 106 to electrically connect the conductive member 102. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006344965(A) 申请公布日期 2006.12.21
申请号 JP20060157253 申请日期 2006.06.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 LU YUNG-CHENG;TSAI MING-HSING
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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