发明名称 |
WIRING STRUCTURE, METHOD FOR FORMING THE SAME, AND DUAL DAMASCENE STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure with harmonized stress, and a method for fabricating it. SOLUTION: The wiring structure is composed of a substrate 100 having a conductive material 102. A composite dielectric layer 110 with at least one stress-harmonizing layer 106 interposed therein overlies a substrate 100. A conductive feature S in the composite dielectric layer 110 passes through the at least one stress-harmonizing layer 106 to electrically connect the conductive member 102. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006344965(A) |
申请公布日期 |
2006.12.21 |
申请号 |
JP20060157253 |
申请日期 |
2006.06.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
LU YUNG-CHENG;TSAI MING-HSING |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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