发明名称 MANUFACTURING METHOD OF MATERIAL FOR EMBEDDING METAL NANOPARTICLES
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technology for utilizing as metal nanoparticles fine particles of a metal having a low melting point which are formed according to a liquid drop epitaxy method. <P>SOLUTION: This manufacturing method of a material for embedding metal nanoparticles comprises: irradiating a molecular beam of a metal having a low melting point to a substrate to form fine particles of the metal having a low melting point as metal nanoparticles on the surface of the substrate; and irradiating molecular beams of elements constituting a compound to grow the compound and consequently to embed the metal nanoparticles into the compound, wherein as the metal having a low melting point, a metal having a low melting point, such as Al which forms a compound semiconductor can be used; as the substrate, a substrate of a compound semiconductor, such as a GaAs substrate can be used; and as the elements constituting a compound, Ga and As, and the like can be used. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006344877(A) 申请公布日期 2006.12.21
申请号 JP20050170694 申请日期 2005.06.10
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 NODA TAKESHI;OGUCHI NOBUYUKI
分类号 H01L21/203;B82B3/00;H01L29/06 主分类号 H01L21/203
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