METHOD FOR THE MONOLITHIC INTEGRATION OF MATERIALS OF HIGH MECHANICAL QUALITY WITH INTEGRATED CIRCUITS FOR MEMS/NEMS APPLICATIONS

摘要

The invention relates to a method for the monolithic integration of materials of high mechanical quality with integrated circuits for MEMS/NEMS applications. According to the invention, a structure with at least three layers is used to form the electronic circuitry and the micro-/nano-electromechanical systems, said layers comprising: a lower or base layer which is intended to be used to form the electronic circuits, an intermediate insulating layer, and an upper layer which is used to form at least part of said MEMS/NEMS. The structure with at least three layers comprises a substrate, such as an SOI substrate, the layers of which are joined to one another prior to the formation therein of the electronic circuits and the MEMS/NEMS, thereby defining areas on the upper and intermediate layers in which said MEMS/NEMS are to be formed and eliminating the remainder of the layers so that the lower layer can be accessed and the electronic circuitry can be formed using standard techniques.