| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reading method of memory cell data which applies low voltages to memory cells adjacent to a memory cell from which data may be read, and a nonvolatile memory device. <P>SOLUTION: The method includes a step for applying a first voltage to a control gate of the read memory cell from which data may be read out of a plurality of memory cells, a step for applying third voltages to the control gates of the memory cell adjacent to the memory cell from which data may be read, and a step for applying second voltages to the control gates of memory cells other than the read memory cell and the adjacent memory cells, the second voltage is equal to a minimum voltage making a current flow in the memory cells independently of the states of the memory cells or is higher than the minimum voltage, and the third voltage is higher than the first voltage and is lower than the second voltage. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
