TEST DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A test apparatus and a semiconductor integrated circuit are provided to improve productivity of static memory by accurately measuring the shortage by the active area and applying the result to the static memory cell area. CONSTITUTION: A semiconductor substrate comprises a first test area and a second test area. First conductive active areas are formed separate from each other by an element isolation area. Second conductive active areas are formed separate from the first conductive active areas. A first gate line is formed on the semiconductor substrate, with one end close to the second conductive active areas. A first shared contact is extended from one end of the first gate line to above the second conductive active areas. The first node is electrically connected on the first shared contact. First conductive test active areas(210) are formed corresponding to the first conductive active areas. A second gate line(234) is formed corresponding to the first gate line. A second shared contact is formed in the second gate line and a part of an element isolation region(202), corresponding to the first shared contact. A second node(274) is electrically connected to the second shared contact.