LIGHT-EMITTING ELEMENT

摘要

Disclosed is a light-emitting element according to an embodiment, comprising: a light-emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and a light extractor arranged on the light-emitting structure, the light extractor comprising: a first nitride semiconductor layer with a first wet etch rate, arranged on the first conductivity-type semiconductor layer, a second nitride semiconductor layer with a second wet etch rate, arranged on the first nitride semiconductor layer, and a third nitride semiconductor layer with a third wet etch rate, wherein the first and third wet etch rates are lower than the second wet etch rate.

主权项

1. A light emitting device comprising:
a light emitting structure comprising a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a light extraction portion disposed on the light emitting structure, wherein the light extraction portion comprises: a first nitride semiconductor layer being disposed on the first conductivity-type semiconductor layer and having a first wet etch rate; and a second nitride semiconductor layer being disposed on the first nitride semiconductor layer and having a second wet etch rate, and a third nitride semiconductor layer having a third wet etch rate, wherein the first wet etch rate and the third wet etch rate are lower than the second wet etch rate.