SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for manufacturing a semiconductor light emitting device package includes forming a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a growth substrate, forming a reflective layer on a first surface of the light emitting structure corresponding to a surface of the second conductivity-type semiconductor layer, forming bumps on the first surface, the bumps being electrically connected to the first or second conductivity-type semiconductor layer and protruding from the reflective layer, bonding a support substrate to the bumps on the first surface, removing the growth substrate, bonding a light transmissive substrate coated with a wavelength conversion layer to a second surface of the light emitting structure from which the growth substrate is removed, and removing the support substrate. The reflective layer covers at least portions of side surfaces of the light emitting structure and the bumps.

主权项

1. A method for manufacturing a semiconductor light emitting device package, the method comprising:
forming a light emitting structure on a growth substrate; forming a reflective layer on a first surface of the light emitting structure; forming bumps on the first surface of the light emitting structure, the bumps being electrically connected to the light emitting structure and protruding from the reflective layer; bonding a support substrate to the bumps on the first surface of the light emitting structure; removing the growth substrate; bonding a light transmissive substrate coated with a wavelength conversion layer to a second surface of the light emitting structure from which the growth substrate is removed; and removing the support substrate, wherein the reflective layer covers at least a portion of side surfaces of the light emitting structure and at least a portion of side surfaces of the bumps.