| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of accurately controlling film thickness in various parts of a substrate surface.SOLUTION: A film deposition apparatus, which supplies a raw material gas onto a surface of a substrate while heating the substrate in a vacuum vessel and deposits a reaction product, produced by reaction of the raw material gas, on the surface of the substrate to form a thin film, is configured to include a mounting part that is installed inside the vacuum vessel to mount the substrate, a rotating mechanism for rotating the substrate mounted on the mounting part, a raw material gas supply part that locally supplies the raw material gas onto the surface of the substrate, and a moving mechanism that moves the raw material gas supply part relatively with respect to the substrate so as to move a position, to which the raw gas material is supplied, between a central part and a peripheral part of the rotating substrate to deposit the reaction product on the whole surface of the substrate. By the film deposition apparatus, a film deposition position on the substrate can be adjusted, and film thickness can be accurately controlled.SELECTED DRAWING: Figure 1 |
