发明名称 SUBSTRATE CLEAVING UNDER CONTROLLED STRESS CONDITIONS
摘要 A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane.
申请公布号 US2016276522(A1) 申请公布日期 2016.09.22
申请号 US201615167291 申请日期 2016.05.27
申请人 Silicon Genesis Corporation 发明人 HENLEY Francois;LAMM Al;CHOW Yi-Lei
分类号 H01L31/18;H01L21/66;H01L21/304;H01L21/78;H01L21/683 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method comprising: providing a surface of a workpiece in contact with a plate, the workpiece including an initial subsurface cleaved portion underlying a partially detached layer from the workpiece along the surface; applying a pre-loading force in a first direction to the workpiece surface in contact with the plate; applying a first loading force along the workpiece surface; and applying a second loading force using a gas pressure to propagate the initial subsurface cleaved portion to release a layer from the workpiece.
地址 Santa Clara CA US