发明名称 |
SUBSTRATE CLEAVING UNDER CONTROLLED STRESS CONDITIONS |
摘要 |
A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane. |
申请公布号 |
US2016276522(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201615167291 |
申请日期 |
2016.05.27 |
申请人 |
Silicon Genesis Corporation |
发明人 |
HENLEY Francois;LAMM Al;CHOW Yi-Lei |
分类号 |
H01L31/18;H01L21/66;H01L21/304;H01L21/78;H01L21/683 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
providing a surface of a workpiece in contact with a plate, the workpiece including an initial subsurface cleaved portion underlying a partially detached layer from the workpiece along the surface; applying a pre-loading force in a first direction to the workpiece surface in contact with the plate; applying a first loading force along the workpiece surface; and applying a second loading force using a gas pressure to propagate the initial subsurface cleaved portion to release a layer from the workpiece. |
地址 |
Santa Clara CA US |