SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

摘要

To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

主权项

1. A semiconductor device comprising:
a first transistor including silicon; a first insulator over the first transistor; a second insulator over the first insulator; a plug embedded in the first insulator and the second insulator; a wiring over the plug; and a second transistor including an oxide semiconductor over the wiring, wherein the first transistor and the second transistor are electrically connected to each other through the wiring and the plug, wherein the wiring includes at least one of a tantalum nitride layer, a tantalum layer, and a titanium nitride layer, and wherein hydrogen permeability of the second insulator is lower than hydrogen permeability of the first insulator.