| 摘要 |
The purpose of the present invention is to achieve a semiconductor laser device wherein warpage generated in a semiconductor laser element and a sub-mount is further suppressed compared with conventional cases. This semiconductor laser device is provided with: a sub-mount; material layers that are respectively formed on two surfaces of the sub-mount, said two surfaces facing each other; a solder layer formed on an upper layer of one of the material layers; and a semiconductor laser element formed on the upper layer of the solder layer. A facing region where the sub-mount and the semiconductor laser element face each other has a first region, which includes both the material layer and the solder layer in the first direction orthogonal to the sub-mount surfaces, and a second region, which includes the material layer or the solder layer, or does not include both the material layer and the solder layer in the first direction. |
