| 摘要 |
This semiconductor device includes: a semiconductor layer; a gate trench formed in the semiconductor layer; a first insulating film that is disposed on the inner surface of the gate trench; a gate electrode that is disposed in the gate trench via the first insulating film; and a source layer, a body layer, and a drain layer, which are disposed on the sides of the gate trench. At least at the bottom portion of the gate trench, the first insulating film includes, in the film thickness direction from the inner surface of the gate trench, a first portion and a second portion that has a lower film denseness than the first portion. |
