| 摘要 |
<p>The present invention speeds up the writing of host data for a nonvolatile memory having a writing speed difference between a lower page and an upper page. The nonvolatile memory performs multiple valued memorization of more than 2 bits in one memory cell, includes the lower page and the upper page for the multiple valued memorization as a physical page for which a physical address is set, and performs data writing by using each page in physical address order. The writing of host data is performed according to a data writing request of a host device for the nonvolatile memory. In this case, data writing is performed to a page just before the lower page so that data wiring of the next data writing request starts from the lower page. [Reference numerals] (AA) Process data writing control;(BB) Yes;(CC) No;(DD) End;(F101) Introduce host data according to a data writing request;(F102) Produce/renew a logical 쨌 physical conversion table;(F103) Write host data;(F104) Next page is a lower page?;(F105) Write management information</p> |
