| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the density of cohesive grains in a polishing slurry, which is used in the chemical-mechanical polishing process in the manufacturing method of a semiconductor integrated circuit device, and to suppress generation of microscratches in the surface to be treated of each wafer. SOLUTION: When a polishing slurry is fed to the surface to be treated of each wafer to flow in a mass production process to perform a chemical machinery polishing treatment, the slurry is made left standing for at least more than 30 days, preferably more then 40 days and more preferably more then 50 days, in a state in which the slurry is filled in a container, whereby concentration of cohesive grains of a grain diameter of 1μm or larger in the slurry is reduced to two hundred thousand pieces/0.5 cc or smaller, preferably less than fifty thousand pieces/0.5 cc and more preferably less than twenty thousand pieces/0.5 cc and the polishing slurry is used in the chemical- mechanical polishing process in the manufacturing method of a semiconductor integrated circuit device.</p> |
