| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing an increase of well resistance even if miniaturized. SOLUTION: An n well 3 is formed on one of principal planes of a p-type semiconductor substrate 1. A plurality of semiconductor elements are formed in the n well 3. An element separation film 2 is further formed in the n well 3 to separate the plurality of semiconductor elements. A recess 15 is formed on the element separation film 2 on a surface opposite to the other principal plane of the substrate 1. Since this semiconductor device has the recess 15 formed on the element separation film 2, more well regions with low resistance only in a region in the recess 15 can be secured than in the case that no recess 15 is formed on the film 2. As a result, an increase in the well resistance caused by the miniturization of the semiconductor device can be suppressed. COPYRIGHT: (C)2007,JPO&INPIT
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