Optoelectronic device with several current spreading layers and its method of fabrication

摘要

Opto-electronic component comprises a semiconductor chip that contains a semiconductor layer assembly (6) and a radiation emitting active zone (4). The layers have side flanks (10) and a connection contact (9). Primary (7) and secondary (8) current layers are located between the layer assembly and the contact. The primary layer has a larger layer resistance than the secondary layer, and forms an ohmic contact with the adjoining semiconductor layer.