| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric film which can be packaged in a micro CMOS circuit and indicates excellent residual polarization characteristics, and manufacturing method thereof, ferroelectric capacitor, ferroelectric memory and manufacturing method thereof. SOLUTION: In the step of manufacturing the ferroelectric film, the ferroelectric film is formed by MOCVD process at a substrate temperature above 380°C and below 420°C, and then crystallized by heat treatment at a substrate temperature above 650°C and below 750°C. The ferroelectric film is composed of Bi<SB>-x+y</SB>A<SB>x</SB>Ti<SB>3</SB>O<SB>12</SB>(A is one element selected from a group of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, and V, and settled within ranges of 0≤x<2 and 3.8≤(-x+y)≤4.6), and the direction of c-axis of crystals more than 73% in the ferroelectric film is inclined at≥70°and≤90°to a surface of the foregoing substrate. COPYRIGHT: (C)2008,JPO&INPIT
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