发明名称 DEVICE AND METHOD FOR HEATING SURFACE OF SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To correctly control the depth of heating and the temperature of the surface of a substrate. SOLUTION: A device for heating the substrate surface by irradiating accelerated electron against the surface of the substrate includes an electron producing means for producing electron between opposed electrodes 12, by discharging a gas between the opposed electrodes 12 arranged in a vacuum vessel 11; a bias application means for applying DC bias on the opposed electrodes 12 and the substrate 18, in order to irradiate electron against the surface of the substrate 18 installed in the vacuum vessel 11; and an irradiation control means for reading the amount of irradiated electron as the value of current and control the amount of irradiation of the electron against the substrate 18, by integrating the values of the current. According to this method, the depth of heating and the temperature of the surface of the substrate 18 are controlled correctly. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008028020(A) 申请公布日期 2008.02.07
申请号 JP20060196900 申请日期 2006.07.19
申请人 FUJITSU LTD 发明人 MORI TOSHIKI;WATANABE SATORU
分类号 H01L21/263 主分类号 H01L21/263
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