| 摘要 |
A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, a source/drain region formed at each side of the gate electrode in the substrate, a first silicon oxide film formed on a gate electrode sidewall so as to serve as a spacer, the first silicon oxide film having a first lower surface in contact with the source/drain region and an upper surface located lower than the substrate upper surface, a second silicon oxide film formed on the source/drain region and a side surface of the first silicon oxide film, the second silicon oxide film having a second lower surface which is in contact with the substrate and is located lower than the lower surface of the first silicon oxide film, and a silicon nitride film formed on an upper surface of the second silicon oxide film.
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