| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid imaging device and a depth map measuring device capable of measuring a depth map with a simple constitution. SOLUTION: A pair of first gate electrodes IGR, IGL is provided on a semiconductor substrate 100 so that respective potentialϕ<SB>TX1</SB>,ϕ<SB>TX2</SB>between a light-sensitive region SA and a pair of first accumulating regions AR, AL is alternately tilted. A pair of second gate electrodes IGR, IGL is provided on the semiconductor substrate 100 so that the height of each first potential barrierϕ<SB>BG</SB>, interposed respectively in between the first accumulating regions AR, AL and second accumulating regions FDR, FDL is controlled; and the larger in proportion to the intensity of the output of background light detected by a photodetection element is, the larger the height of the first potential barrierϕ<SB>BG</SB>to a carrier is. COPYRIGHT: (C)2009,JPO&INPIT |
