COMPOSITION FOR FORMING SILICON-CONTAINING FINE PATTERN AND METHOD FOR FORMING FINE PATTERN USING THE SAME
摘要
<p>Disclosed is a composition for forming a fine pattern, which enables to form a fine pattern having high dry etching resistance. Also disclosed is a method for forming such a fine pattern. The composition contains a resin containing a repeating unit having a silazane bond, and a solvent. The method for forming a fine pattern comprises a step for processing a resist pattern with such a composition.</p>
申请公布号
WO2009035087(A1)
申请公布日期
2009.03.19
申请号
WO2008JP66556
申请日期
2008.09.12
申请人
AZ ELECTRONIC MATERIALS (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP.;DAMMEL, RALPH. R;KANG, WENBING;SHIMIZU, YASUO;ISHIKAWA, TOMONORI
