| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device having an electrode conductor film. Ž<P>SOLUTION: A contact hole CH is formed in an interlayer dielectric IL of a silicon substrate 1 where an n-type MIS transistor Qn is formed (steps s03 to s07), and the electrode conductor film E1 is formed filling the contact hole (steps s11 to s14). The electrode conductor film E1 is deposited in twice as a first conductor film E1a of 1 to 3 μm and a second conductor film E1b of 1 to 3 μm (steps s12 and s14), wherein a silicon substrate 1 is made to temporarily stand-by (step s13) during the steps of depositing them, and the first conductor film E1a is deposited at a faster deposition speed than the second conductor film E1b. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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