发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF DRIVING THE SAME |
摘要 |
According to one embodiment, a semiconductor storage device includes a flip-flop circuit configured with two stages of inverters composed of TFETs The flip-flop circuit includes first and second nodes. A first access transistor composed of a TFET is provided between the first node and a first write word-line. A second access transistor composed of a TFET is provided between the second node and a second write word-line. A MOS transistor which has a gate connected to the first node and responds to a voltage impressed on a read word-line to supply a voltage corresponding to a potential at the first node to a read bit-line is included. The first and second access transistors are configured with TFETs connected in a manner that a drain current flows from the first and second nodes to a write bit-line when turned on. |
申请公布号 |
US2016196869(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201514837424 |
申请日期 |
2015.08.27 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
MIYANO Shinji |
分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor storage device comprising:
a first inverter configured with a tunnel transistor; a first node receiving an output from the first inverter; a second inverter configured with a tunnel transistor; a second node receiving an output from the second inverter; a first access transistor having a source-drain path connected between the first node and a first write bit-line and a gate connected to a write word-line; a second access transistor having a source-drain path connected between the second node and a second write bit-line and a gate connected to the write word-line; and a first MOS transistor circuit configured to respond to a voltage impressed on a read word-line and supply a voltage corresponding to a voltage on the first node to a first read bit-line, wherein the first access transistor includes a tunnel transistor connected in a manner that a drain current flows from the first node to the first write bit-line when turned on in a forward biased state, and the second access transistor includes a tunnel transistor connected in a manner that a drain current flows from the second node to the second write bit-line when turned on in a forward biased state. |
地址 |
Tokyo JP |