| 发明名称 |
Method for Forming Patterns with Sharp Jogs |
| 摘要 |
The present disclosure provides a method for forming patterns in a semiconductor device. The method includes forming a main pattern on a substrate; forming a spacer on sidewalls of the main pattern; forming a cut pattern having an opening by a first lithography process; and performing a cut process to selectively remove portions of the spacer within the opening of the cut pattern while the main pattern remains unetched, thereby defining a circuit pattern by the main pattern and the spacer. The circuit pattern includes a sharp jog. |
| 申请公布号 |
US2016276164(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201514659264 |
申请日期 |
2015.03.16 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Shih Ming |
| 分类号 |
H01L21/308;H01L21/027;H01L21/311 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming patterns in a semiconductor device, comprising:
forming a main pattern on a substrate; forming a spacer on sidewalls of the main pattern; forming a first cut pattern having a first opening by a first lithography process; and performing a first cut process to selectively remove portions of the spacer within the first opening of the first cut pattern while the main pattern remains unetched, thereby defining a circuit pattern by the main pattern and the spacer, wherein the circuit pattern includes a sharp jog. |
| 地址 |
Hsin-Chu TW |
