METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT DEVICE, AND RECORDING MEDIUM

摘要

[Problem] To form a thin film having superior film thickness uniformity and step coverage on a substrate surface.[Solution] The present invention forms a metal-containing film on a substrate by performing, a prescribed number of times: a metal-containing-gas filling step for filling a first gas storage part provided in a metal-containing-gas supply tube with a metal-containing gas; an inert-gas filling step for filling a second gas storage part provided in an inert-gas supply tube with an inert gas; a first depressurizing step for depressurizing the inside of a treatment chamber to a first pressure; a metal-containing-gas supply step for supplying the inert gas filling the second gas storage part while supplying the metal-containing gas filling the first gas storage part to the treatment chamber; a first removal step for removing the metal-containing gas; a reaction-gas filling step for filling a third gas storage part provided in a reaction-gas supply tube with a reaction gas; a second depressurizing step for depressurizing to a second pressure; a reaction-gas supply step for supplying the reaction gas filling the third gas storage part to the treatment chamber; and a second removal step for removing the reaction gas.