| 摘要 |
The present disclosure provides a light emitting element, wherein each of first and second semiconductor layers has first and second pits disposed therein, wherein the first pit has a first depth and the second pit has a second depth smaller than the first depth, and the first and second pits are coupled to each other, wherein a density of the second pits in an upper portion of the second semiconductor layer is lower than a density of the second pits in an upper portion of the first semiconductor layer, wherein a density of the first pits in the upper portion of the second semiconductor layer is equal to a density of the first pits in the upper portion of the first semiconductor layer. |
| 主权项 |
1. A light emitting element comprising:
a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed on the second semiconductor layer; and a third semiconductor layer disposed on the active layer, wherein the second semiconductor layer includes a first nitride layer and a second nitride layer on the first nitride layer on the first nitride layer, wherein the first nitride layer is AlGaN-based semiconductor, and the second nitride layer is formed of a different semiconductor from a semiconductor of the first nitride layer, wherein each of the first and second semiconductor layers has first and second pits disposed therein, wherein the first pit has a first depth from a top surface of each of the first and second semiconductor layers, and the second pit has a second depth smaller than the first depth, and the first and second pits are connected to each other, wherein a density of the second pits in an upper portion of the second semiconductor layer is lower than a density of the second pits in an upper portion of the first semiconductor layer, and wherein a density of the first pits in the upper portion of the second semiconductor layer is equal to a density of the first pits in the upper portion of the first semiconductor layer. |
