SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer. The source field plate sequentially comprises: a start portion electrically connected to the source electrode; a first intermediate portion spaced apart from the semiconductor layer with air therebetween; a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion spaced apart from the semiconductor layer with air therebetween.

主权项

1. A semiconductor device, comprising:
a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer, sequentially comprising:
a start portion electrically connected to the source electrode;a first intermediate portion spaced apart from the semiconductor layer with air therebetween;a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; andan end portion spaced apart from the semiconductor layer with air therebetween.