Anti-reflective coating layer for semiconductor device

摘要

In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0 TM , is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.