| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to have an interconnecting metal contact having a good electrical characteristic, and a stud contact for interconnecting a metal wire layer with a device on a substrate. CONSTITUTION: A DRAM integrated semiconductor comprises a shallow trench(101), pad poly-silicons(103,110,111) formed on a cell area, a bit line(104), a direct contact(105) and an embedded contact(106). A capacitor for storing an electric charge is formed on an upper portion of a gate transistor in the cell area. The capacitor for storing an electric charge has a stack architecture, and consists of a lower electrode(107), a TaO/HSG dielectric, and an upper poly-silicon electrode(109).
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