METHOD FOR FORMING STORAGE NODE HOLE TO REDUCE CONTAMINATION OF WAFER

摘要

PURPOSE: A method for forming a storage node hole is provided to be capable of simplifying process and reducing contamination of a wafer. CONSTITUTION: An interlayer dielectric(110) is formed on a substrate(100). An etch stop layer, a mold layer and an organic ARC(Anti-Reflective Coating) layer are sequentially formed on the interlayer dielectric. An organic ARC pattern(150a) is formed by patterning the ARC layer using a photoresist pattern as a mask. A mold pattern(140a) is formed by patterning the mold layer. An etch stop pattern(130a) is formed by patterning the etch stop layer, and a storage node hole(170) is simultaneously formed to expose a desired portion of the interlayer dielectric. The photoresist pattern and the organic ARC pattern are simultaneously removed.