METHOD FOR FORMING METAL INTERCONNECTION OF DUAL DAMASCENE STRUCTURE TO IMPROVE PROCESS MARGIN AND RELIABILITY

摘要

PURPOSE: A method for forming a metal interconnection of a dual damascene structure is provided to improve process margin and reliability by effectively preventing destructive photoresist. CONSTITUTION: The first and second insulating layer are formed on a substrate(100) with a conductive pattern(90). The first insulating pattern(115a) having a via is formed to expose the conductive pattern by selectively etching the second and first insulating layer. At this time, nitrogen material is generated in the via. The nitrogen material is substituted by applying hydrogen. The second insulating pattern(125b) including a trench is formed by selectively etching the second insulating layer, thereby forming a dual damascene pattern. Then, a metal interconnection(160a) is formed in the dual damascene pattern.