| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve junction reliability at a bump formation region. <P>SOLUTION: A semiconductor device 100 comprises a substrate (a substrate 101 for packaging) and a semiconductor element (semiconductor element 112) subjected to flip-chip connection onto the substrate. The substrate (substrate 101 for packaging) is a substrate for flip-chip connection, where the element (semiconductor element 112) is packaged on one surface while facing down, and comprises a junction section 120 where a bump for electrically joining wiring 104 provided on the substrate 101 for packaging and an electrode pad provided in the semiconductor element 112, and insulating films (first insulating layer 106 and a second one 108) for covering one portion of an element packaging surface excluding the junction section 120. The insulating films contain a strip of insulating film (second insulating layer 108) provided in a strip along a bump formation region inside the bump formation region, and has an opening (near the center of a second region 122) in a region inside the second insulating layer 108. <P>COPYRIGHT: (C)2007,JPO&INPIT |
