发明名称 Method for forming multilayer device having solder filled via connection
摘要 A method of forming a multilayer device includes providing a core substrate having opposing first and second core surfaces and forming top and bottom inner conductive patterns on each of the first and second core surfaces, respectively. A first dielectric layer is formed on the first core surface, and the top inner conductive pattern. A second dielectric layer is formed on the second core surface, and the bottom inner conductive pattern. The first and second dielectric layers are laminated with top and bottom outer conductive layers, respectively. A first via is provided through the core substrate extending from the top outer conductive layer to the bottom outer conductive layer. The first via is filled with solder. Magnetic particles are attracted by a magnetic force into the first via.
申请公布号 US9351407(B1) 申请公布日期 2016.05.24
申请号 US201514591933 申请日期 2015.01.08
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Low Boon Yew
分类号 H01K3/10;H05K3/40;H05K1/02;H05K1/11;H05K3/46 主分类号 H01K3/10
代理机构 代理人 Bergere Charles E.
主权项 1. A method for forming a multilayer device, the method comprising: providing a core substrate having opposing first and second core surfaces; forming a top and a bottom inner conductive pattern on each of the first and second core surfaces, respectively; forming a first dielectric layer on at least a portion of the first core surface, and the top inner conductive pattern; forming a second dielectric layer on at least a portion of the second core surface, and the bottom inner conductive pattern; laminating the first and second dielectric layers with top and bottom outer conductive layers, respectively; providing a first via through the core substrate, wherein the first via extending from the top outer conductive layer to the bottom outer conductive layer; and attracting, by a magnetic force, at least one solder coated magnetic particle into the first via.
地址 Austin TX US