THIN-FILM SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, DEPOSITION APPARATUS, DEPOSITION METHOD AND GaN TEMPLATE

摘要

The purpose of the present invention is to provide a thin-film substrate in which a hexagonal crystal buffer layer is formed on a cubic crystal substrate, a semiconductor device, a manufacturing method therefor, a deposition apparatus, a deposition method and a GaN template. This deposition method is a method that deposits a hexagonal crystal thin-film on a cubic crystal substrate. A substrate (110) is a cubic crystal Si (001) substrate. The substrate (110) is disposed on a susceptor (1200) in a chamber (1100). A target (1500) is disposed at a position that is inclined within a range of 10° to 60° with respect to a direction perpendicular to the plate surface of the substrate (110). A hexagonal crystal buffer layer (120) is deposited on the cubic crystal substrate (110) by sputtering without rotating the substrate (110) with respect to the chamber (1100).