发明名称 |
Methods for fabricating integrated circuits having substrate contacts and integrated circuits having substrate contacts |
摘要 |
Methods for fabricating integrated circuits having substrate contacts and integrated circuits having substrate contacts are provided. One method includes forming a first trench in a SOI substrate extending through a buried insulating layer to a silicon substrate. A metal silicide region is formed in the silicon substrate exposed by the first trench. A first stress-inducing layer is formed overlying the metal silicide region. A second stress-inducing layer is formed overlying the first stress-inducing layer. An ILD layer of dielectric material is formed overlying the second stress-inducing layer. A second trench is formed extending through the ILD layer and the first and second stress-inducing layers to the metal silicide region. The second trench is filled with a conductive material. |
申请公布号 |
US8609533(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201213436323 |
申请日期 |
2012.03.30 |
申请人 |
SCHEIPER THILO;FLACHOWSKY STEFAN;HOENTSCHEL JAN;GLOBALFOUNDRIES, INC. |
发明人 |
SCHEIPER THILO;FLACHOWSKY STEFAN;HOENTSCHEL JAN |
分类号 |
H01L21/311;H01L21/314;H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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