| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride electronic device manufacturing method which can reduce a dispersion width of leakage characteristics.SOLUTION: A nitride electronic device manufacturing method comprises: performing a treatment using a first solution containing tetramethyl ammonium hydroxide to form a first treatment surface 65f on a semiconductor laminate 53b by a processing unit 10d, in which a treatment temperature by the first solution is not less than 50 degrees C and not more than 100 degrees C and a concentration of the first solution is not less than 5 percent and not more than 50 percent; and performing a second treatment process following a first treatment process, of performing a tetramethyl ammonium hydroxide treatment, and subsequently, performing a treatment using a second solution containing hydrofluoric acid and hydrogen peroxide on the semiconductor laminate 53b to form a second treatment surface 65g on the semiconductor laminate 53b by a processing unit 10e. After performing the second treatment process, a concentration of a donor impurity of the treatment surface 65g of the semiconductor laminate 53b is equal to or lower than 5×10cm. |
