MICRO-LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.

主权项

1. A micro-light-emitting diode device comprising:
a first semiconductor layer having a first bottom surface; an active layer disposed on the first semiconductor layer; and a second semiconductor layer having a second bottom surface, the second semiconductor layer being disposed on the active layer, a surface of the second semiconductor layer opposite to the active layer being a light-exiting surface of the micro-light-emitting diode device, the second semiconductor layer having multiple thicknesses, a minimum thickness of the second semiconductor layer being located at an edge or at least one side of the second semiconductor layer, vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface being substantially the same.