| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that reduces an influence on a base for deposition when forming a film including a metal element on a substrate.SOLUTION: A method of manufacturing a semiconductor device comprises a process of forming a film including a metal element by laminating a first film and a second film on a substrate by performing: a process of forming the first film including a metal element on a substrate by performing a cycle, including a process 1a of supplying a first raw material gas as an inorganic gas containing the metal element and no fluorine to the substrate and a process 2a of supplying a first reducing reactant gas to the substrate, as many times as specified; and a process of forming the second film including the metal element on the first film by performing a cycle, including a process 1b of supplying a second raw material gas including the metal element and a second raw material gas to the substrate and a process 2b of supplying a second reducing gas to the substrate, as many times as specified.SELECTED DRAWING: Figure 4 |
