发明名称 |
Decoder circuit for use in a non-volatile semiconductor memory device |
摘要 |
<p>A decoder circuit for use in a non-volatile semiconductor memory device including memory blocks comprises a decoder configured to select one of the memory blocks by decoding an address signal to produce a decoded address signal, a latch configured to latch the decoded address signal, and a switch configured to output a block select signal selected according to a mode of operation from the group consisting of the decoded address signal and a latch output, and further configured to block the latch output and select the decoded address signal when a suspend command is received, and to select the latch output and block the decoded address signal in response to a resume command that signals the resumption of the multi-block erase operation.</p> |
申请公布号 |
EP1860662(A1) |
申请公布日期 |
2007.11.28 |
申请号 |
EP20070016056 |
申请日期 |
2005.03.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SEOK-HEON;LEE, JIN-YUB;PARK, DAE-SIK;KIM, TAE-GYUN;CHOI, YOUNG-JOON |
分类号 |
G11C16/14;G11C16/16;G11C16/06;G11C16/34 |
主分类号 |
G11C16/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|