发明名称 Decoder circuit for use in a non-volatile semiconductor memory device
摘要 <p>A decoder circuit for use in a non-volatile semiconductor memory device including memory blocks comprises a decoder configured to select one of the memory blocks by decoding an address signal to produce a decoded address signal, a latch configured to latch the decoded address signal, and a switch configured to output a block select signal selected according to a mode of operation from the group consisting of the decoded address signal and a latch output, and further configured to block the latch output and select the decoded address signal when a suspend command is received, and to select the latch output and block the decoded address signal in response to a resume command that signals the resumption of the multi-block erase operation.</p>
申请公布号 EP1860662(A1) 申请公布日期 2007.11.28
申请号 EP20070016056 申请日期 2005.03.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEOK-HEON;LEE, JIN-YUB;PARK, DAE-SIK;KIM, TAE-GYUN;CHOI, YOUNG-JOON
分类号 G11C16/14;G11C16/16;G11C16/06;G11C16/34 主分类号 G11C16/14
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