发明名称 |
A METHOD FOR ADJUSTING SUBSTRATE PROCESSING TIMES IN A SUBSTRATE POLISHING SYSTEM |
摘要 |
<p>Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate is in one of the polishing stations is taken. Then the substrate is processed in the polishing system for a predetermined processing time. A post-processing thickness measurement is taken while the substrate is in one of the polishing stations. A removal rate is calculated based on the pre-processing and the post-processing measurements and the predetermined processing time. A processing time is adjusted for one or more of the polishing stations based on the removal rate for use in subsequent processing of a production substrate.</p> |
申请公布号 |
KR20080082012(A) |
申请公布日期 |
2008.09.10 |
申请号 |
KR20087019266 |
申请日期 |
2008.08.06 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
KO SEN HOU;LEE HARRY Q.;HSU WEI YUNG |
分类号 |
H04H60/31;B24B37/04;B24B49/00;H01L21/304 |
主分类号 |
H04H60/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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