| 摘要 |
The invention relates to a data memorisation device ( 100, 200, 300 ) comprising at least: a stack of layers comprising at least one memory layer ( 106.1 to 106.3 ) based on a phase change material arranged between at least two insulating layers, placed on a substrate ( 102 ), of plurality of columns ( 110 ) arranged in the stack of layers ( 106.1 to 106.3, 108 ), and passing through each layer of this stack, each of the columns ( 110 ) being based on at least one electrically conducting material, a plurality of memory elements formed by annular portions of the memory layer ( 106.1 to 106.3 ) surround said columns ( 110 ).
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