| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a source region and a body region are exposed from a contact hole between gate electrodes and brought into contact to a source electrode in a conventional structure so as to assure a sufficient contact area, so that there is a limit to reduce a cell pitch and reduction of on-state resistance is not promoted. SOLUTION: In an insulated-gate semiconductor device, in an active region, only a source region is exposed between gate electrodes 7 and a first body region 13a is provided below the source region. The first body region is connected to a second body region 13b provided outside of the active region, and the second body region is brought into contact with a first electrode layer (source electrode). Thereby, each transistor cell have only to assure the area where the source electrode and the source region are brought into contact with each other, so that a contact width is reduced and the cell pitch is reduced. The number of cells of the active region is thereby increased, and on-state resistance due to reduction of the cell resistance is reduced. COPYRIGHT: (C)2009,JPO&INPIT
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