| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, by which an ultrathin and fine interface layer is formed which separates a high-k film and a silicon substrate. SOLUTION: The method of manufacturing the semiconductor device includes a step (oxide film formation step) of forming a silicon oxide film on a silicon substrate surface, a step (etching step) of etching the silicon oxide film to a desired film thickness, and a step (high-k film formation step) of forming the high-k film on the silicon oxide film having been etched. COPYRIGHT: (C)2009,JPO&INPIT
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