| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal oxide film which is manufactured by a relatively-low-temperature liquid phase method and has excellent characteristics as a semiconductor active layer of a TFT etc. SOLUTION: The metal oxide film 40 is an amorphous structure film in which a hydroxyl group is present in the film and which has a composition distribution satisfying the following conditions. In the composition of a film surface on a substrate side, principal component metal elements are In and Zn. C<SB>Zn</SB>(B)/C<SB>In</SB>(B)=0.5 to 2.0 and C<SB>Ga+Al</SB>(B)/C<SB>In+Zn</SB>(B)=0.0 to 0.125. In the composition of a film surface on the opposite side from the substrate side, principal component metal elements are at least one of In and Zn, and Ga and Al. C<SB>Zn</SB>(T)/C<SB>In</SB>(T)=0.5 to 2.0 and C<SB>Ga+Al</SB>(T)/C<SB>In+Zn</SB>(T)≥0.375. Here, C<SB>Zn</SB>/C<SB>In</SB>represents a Zn/In mol ratio and C<SB>Ga+Al</SB>/C<SB>In+Zn</SB>represents a Ga+Al/In+Zn mol ratio. Further, (B) represents the film surface on the substrate side and (T) represents the film surface on the opposite side from the substrate side. COPYRIGHT: (C)2010,JPO&INPIT
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